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Inventi Impact: Electrical Engineering

Articles

  • Inventi:eee/113636/25
    Preparation and Performance Exploration of MoS2/WSe2 Van Der Waals Heterojunction Tunneling Field-Effect Transistor
    01-Jan-2026 Research 2026 : January-March
    Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Cong Yan

    Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owing to their low energy consumption. This study investigates a TMD van der Waals heterojunction (VdWH) TFET, specifically by fabricating MoS2 field-effect transistors (FETs), WSe2 FETs, and MoS2/WSe2 VdWH TFETs. The N-type characteristics of the MoS2 and P-type characteristics of WSe2 are established through an analysis of the electrical characteristics of the respective FETs. Finally, we analyze the energy band and electrical characteristics of the MoS2/WSe2 VdWH TFET, which exhibits a drain current switching ratio of 105. This study provides valuable insights for the development of novel low-power devices.

    How to Cite this Article
    Attribution/ CC Compliant Citation: Chong, C.; Liu, H.; Wang, S.; Chen, S.; Yan, C. Preparation and Performance Exploration of MoS2/WSe2 Van Der Waals Heterojunction Tunneling Field-Effect Transistor. Micromachines 2025, 16, 1108. https://doi.org/10.3390/mi16101108 https://creativecommons.org/licenses/by/4.0/ Some formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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