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Inventi Impact: Electrical Engineering

Articles

  • Inventi:eee/25330/18
    Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
    01-Jan-1970 Research 2018 : April - June
    Jiongjiong Mo, Xuran Zhao, Min Zhou

    Thetotal ionizing dose irradiation effects are investigated in Si vertical diffusedMOSFETs (VDMOSs) with different gate dielectrics\nincluding single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for\ndouble Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative\nthreshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different

    How to Cite this Article
    CC Compliant Citation: Jiongjiong Mo, Xuran Zhao, and Min Zhou, â??Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2\nand Si3N4/SiO2 Gate Dielectrics,â? Active and Passive Electronic Components, vol. 2017, Article ID 9685685, 7 pages, 2017,\ndoi:10.1155/2017/9685685, https://creativecommons.org/licenses/by/4.0/.
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