Surface-emitting distributed-feedback (SE-DFB) semiconductor lasers based on secondorder gratings face a fundamental triple constraint: the spatial co-location of gain, grating feedback, and vertical radiation functions limits single-mode selectivity, surface extraction efficiency, and far-field beam quality simultaneously. We propose a quasi-parity-time (PT)- symmetric SE-DFB laser with separated gain and radiating-grating sections. In this design, the electrically injected gain section and the passive second-order grating section are placed in different regions along the cavity axis, thereby separating electrical injection from surface emission without epitaxial regrowth. Coupled-mode theory and two-dimensional finiteelement simulations demonstrate that the resulting longitudinal non-Hermitian gain–loss asymmetry produces spatial-overlap-dependent threshold discrimination, enabling an isolated low-threshold lasing branch that remains separated from competing cavity modes over the investigated pump-parameter range. Under the HR–AR boundary condition, the proposed design achieves a threshold gain margin of Δg = 12.4 cm−1, more than six times that of a conventional HR–AR DFB benchmark considered here, together with an upward surface extraction efficiency of 23.4% obtained from 2D FEM simulations. A simplified steady-state rate-equation estimate further suggests that the increased threshold margin can support strong side-mode suppression. The design imposes no regrowth requirement and is fully compatible with standard single-growth InP ridge-waveguide fabrication.
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