This paper investigated the property evolutions of Mo thin films that were subjected to\npost-sputtering heat treatments from... It was found that, after annealing, the use\nof Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on\nfused silica substrates. The recrystallization of the Mo thin film was found to start at...., which\nled to rearrangements of the preferred crystalline orientation and enhancement of grain size when\nthe annealing temperature was further increased. The electrical conductivity of the Mo thin films was\nmajorly affected by the increase of Mo crystallite size as the annealing temperature was increased.\nOverall, the improvement of material sustainability and compatibility in the high temperature\nannealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical\nstructured Si QDs solar cells.
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