which\nled to rearrangements of the preferred crystalline orientation and enhancement of grain size when\nthe annealing temperature was further increased. The electrical conductivity of the Mo thin films was\nmajorly affected by the increase of Mo crystallite size as the annealing temperature was increased.\nOverall, the improvement of material sustainability and compatibility in the high temperature\nannealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical\nstructured Si QDs solar cells.
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