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Inventi Impact: VLSI

Articles

  • Inventi:evs/28520/19
    40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-Floating Technique and\nUltra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications
    Research 2019 : April - June
    Truong Thi Kim Nga, DongSoo Lee, SungJin Kim, Minjae Lee, KeumCheol Hwang, Youngoo Yang, Kang-Yoon Lee

    In the IoT/wearable devices, the antenna is shared with the receiver and transmitter of the\ntransceiver. This requires the control of the switch between the antenna and the control circuitry to\nachieve both low insertion loss and high isolation. This paper presents a low insertion loss and high\nisolation switch based on Single Pole Double Throw (SPDT) switch for 2.4 GHz Bluetooth low power\n(BLE) transceiver. The body-floating technique is used to improve the insertion lossâ??s performance.\nAn ultra-small on-chip matching network with high Q-factor is proposed. The shunt transistors\nare used as active shunt capacitors that create the active matching network to improve isolation\ncharacteristics. The proposed SDPT switch was designed using 55 nm CMOS process with the total.................

    How to Cite this Article
    CC Compliant Citation: Nga, Truong, et al. \"40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-\nFloating Technique and Ultra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications.\"\nElectronics 7.11 (2018): 297, doi:10.3390/electronics7110297, http://creativecommons.org/licenses/by/4.0/.
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