Cu-Mn-Dy resistive thin films were prepared on glass and Al2O3 substrates, which was\nachieved by co-sputtering the Cu-Mn alloy and dysprosium targets. The effects of the addition of\ndysprosium on the electrical properties and microstructures of annealed Cu-Mn alloy films were\ninvestigated. The composition, microstructural and phase evolution of Cu-Mn-Dy films were\ncharacterized using field emission scanning electron microscopy, transmission electron\nmicroscopy and X-ray diffraction.All Cu-Mn-Dy films showed an amorphous structure when the\nannealing temperature was set at 300 DegreeC. After the annealing temperature was increased to 350 DegreeC,\nthe MnO and Cu phases had a significant presence in the Cu-Mn films. However, no MnO phases\nwere observed in Cu-Mn-Dy films at 350 DegreeC. Even Cu-Mn-Dy films annealed at 450 DegreeC showed\nno MnO phases. This is because Dy addition can suppress MnO formation. Cu-Mn alloy films\nwith 40% dysprosium addition that were annealed at 300 DegreeC exhibited a higher resistivity of approximately 2100 micro Ohm.cm with a temperature coefficient of resistance of -85 ppm/DegreeC.
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