In this work, we propose and evaluate a concept for a selective thermal emitter based\non Tamm plasmons suitable for monolithic on-chip integration and fabrication by conventional\ncomplementary metal oxide semiconductor (CMOS)-compatible processes. The original design of\nTamm plasmon structures features a purely one-dimensional array of layers including a Bragg mirror\nand a metal. The resonant field enhancement next to the metal interface corresponding to optical\nTamm states leads to resonant emission at the target wavelength, which depends on the lateral\ndimensions of the bandgap structure. We demonstrate the application of this concept to a silicon\nslab structure instead of deploying extended one dimensional layers thus enabling coupling into\nslab waveguides.Here we focus on the mid-infrared region for absorption sensing applications,\nparticularly on the CO2 absorption line at 4.26 micro m as an example. The proposed genetic-algorithm\noptimization process utilizing the finite-element method and the transfer-matrix method reveals\nresonant absorption in case of incident modes guided by the slab and, by Kirchhoffâ??s law, corresponds\nto emittance up to 90% depending on different choices of the silicon slab height when the structure is\nused as a thermal emitter. Although we focus on the application as an emitter in the present work,\nthe structure can also be operated as an absorber providing adjusted lateral dimensions and/or\nexchanged materials (e.g., a different choice for metal).
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