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Inventi Impact: VLSI

Articles

  • Inventi:evs/32753/20
    Investigation on Tunneling-Based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation
    Research 2020 : October - December
    Kitae Lee, Sihyun Kim, Daewoong Kwon, Byung-Gook Park

    Ternary complementary metal-oxide-semiconductor technology has been spotlighted\nas a promising system to replace conventional binary complementary metal-oxide-semiconductor\n(CMOS) with supply voltage (VDD) and power scaling limitations. Recently, wafer-level integrated\ntunneling-based ternary CMOS (TCMOS) has been successfully reported. However, the TCMOS\nrequires large VDD......................

    How to Cite this Article
    Attribution/ CC Compliant Citation:Lee, Kitae, et al. \"Investigation on Tunneling-based Ternary CMOS with Ferroelectric-\nGate Field Effect Transistor Using TCAD Simulation.\" Applied Sciences 10.14 (2020): 4977.\nhttps://doi.org/10.3390/app10144977\nhttp://creativecommons.org/licenses/by/4.0/\nSome formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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