In this paper it is propose a broadband low noise amplifier with high linearity performance. The amplifier achieves broadband, low noise performance and high linearity using a bias circuit with high impedance. The bias circuit consists of an inductor, a resistor, and a current source. The circuit obtains high impedance using a high resistive component. It is also propose a broadband, frequency-selective low-noise amplifier (LNA) with at least 25 dB of rejection at frequencies below the L-band (includes GPS and GSM carriers) is fabricated in a 90 nm standard CMOS process and the proposed LNA can be used for broadband impulse-radio ultra-wideband (IR-UWB) and frequency modulated FM-UWB.
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