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Inventi Impact: Nanotech & Bionic Engg

Articles

  • Inventi:enb/26/11
    MODELING AND SIMULATION OF SPECIAL SHAPED SOI MATERIALS FOR THE NANODEVICES IMPLEMENTATION
    30-Sep-2011 Research 2011 : October - December
    Cristian Ravariu , Florin Babarada

    In the industrial chain of the nanomaterials for electronic devices, a main stage is represented by the wafer characterization. This paper is starting from a standard SOI wafer with 200?nm film thickness and is proposing two directions for the SOI materials miniaturization, indexing the static characteristics by simulation. The first SOI nanomaterial is a sub-10?nm Si-film with a rectangular shape. The influence of the buried interface fixed charges has to be approached by the distribution theory. The second proposal studies the influence of the vacuum cavity in a ââ?¬Å?Uââ?¬Â shaped SOI nanofilm. In all cases, with rectangular or ââ?¬Å?Uââ?¬Â shape film, the simulations reveal transfer characteristics with a maximum and output characteristics with a minimum for sub-10?nm thickness of the SOI film.

    How to Cite this Article
    CC Compliant Citation: Cristian Ravariu, Florin Babarada,\r\nModeling and Simulation of Special Shaped SOI Materials for the\r\nNanodevices Implementation, Hindawi Publishing Corporation\r\nJournal of Nanotechnology Volume 2011, Article ID 792759.
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