Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface\ndepending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent\na challenging task. We investigated two different approaches to realize the electrical contacts in order to enable\nelectrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the\nfabrication of electrical contact with EBL technique.
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