A nano-patterning approach on silicon dioxide (SiO2) material, which could be used for\nthe selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process,\na silicon (Si) stamp with nanopillar structures was first fabricated using electron-beam lithography\n(EBL) followed by a dry etching process. Afterwards, the Si stamp was employed in nanoimprint\nlithography (NIL) assisted with a dry etching process to produce nanoholes on the SiO2 layer.\nThe demonstrated approach has advantages such as a high resolution in nanoscale by EBL and good\nreproducibility by NIL. In addition, high time efficiency can be realized by one-spot electron-beam\nexposure in the EBL process combined with NIL for mass production. Furthermore, the one-spot\nexposure enables the scalability of the nanostructures for different application requirements by tuning\nonly the exposure dose. The size variation of the nanostructures resulting from exposure parameters\nin EBL, the pattern transfer during nanoimprint in NIL, and subsequent etching processes of SiO2\nwere also studied quantitatively. By this method, a hexagonal arranged hole array in SiO2 with a hole\ndiameter ranging from 45 to 75 nm and a pitch of 600 nm was demonstrated on a four-inch wafer.
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