Studied are peculiarities of the changes in the structure and electrophysical properties of nanocrystalline silicon carbide films of 3CSiC\r\npolytype subjected to the action of picosecond laser pulses with ??=355nmand a pulse power up to 1.5W. It is established that\r\nlaser processing of the films with an energy density of 3 Ã?â?? 10-2-30 J/cm2 leads to ablation without decomposition of SiC. During the\r\nlaser processing the electrical resistance of the films rises due to diminution of the film thickness.While measuring the PL properties\r\nof nc-SiC films under the influence of the applied electric field with intensity 3 Ã?â?? 103 V/cm, the effect of a single triple enhancement\r\nof the luminescence maximum is revealed. Repeated PL measurements at the same area of the film under the applied electric field\r\nwith the intensity ranging from0 to 1 Ã?â?? 104 V/cm show that the PL emission intensity diminishes at the short-wavelength boundary\r\nof themaximum and rises at the long-wavelength boundary.Thereat the spectral position of the PL maximum remains unchanged.
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