Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order\r\nto enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs) have become themain building block of silicon\r\nphotonic (modulators, waveguide, source, and detectors). In this work, we present an approach based on implantation of Ag (or Au)\r\nions and a proper thermal annealing in order to improve the photoluminescence (PL) emission of Si-NCs embedded in SiO2. The\r\nSi-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 ??m under surface).\r\nOnce Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by,\r\nPL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere\r\ncould significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with\r\nan enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances\r\nthe hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.
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