Transfer of graphene, grown by chemical vapor deposition (CVD), to a substrate of choice,\ntypically involves the deposition of a polymeric layer (for example, poly(methyl methacrylate)\n(PMMA), or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving\nsome residues behind. One method to improve the graphene transfer is to coat the graphene with a\nthin protective oxide layer, followed by the deposition of a very thin polymer layer on top of the oxide\nlayer (much thinner than the usual thickness), followed by a more aggressive polymeric removal\nmethod, thus leaving the graphene intact. At the same time, having an oxide layer on graphene may\nserve applications, such as channeled transistors or sensing devices. Here, we study the transfer\nof graphene with a protective thin oxide layer grown by atomic layer deposition (ALD).We follow\nthe transfer process from the graphene growth stage through oxide deposition until completion.\nWe report on the nucleation growth process of oxides on graphene, their resultant strain and their\noptical transmission.
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