The saturation regime of two types of fully depleted (FD) SOIMOSFET devices was studied.Ultra thin body (UTB) and gate recessed\nchannel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective ââ?¬Å?gate recessedââ?¬Â process. They\nshare the same W/L ratio but have a channel film thickness of 46nm and 2.2 nm, respectively. Their standard characteristics\n(IDS-VDS and IDS-VGS) of the devices were measured at room temperature before cooling down to 77K. Surprisingly, their respective\ntemperature dependence is found to be opposite. In this paper, we focus our comparative analysis on the devicesââ?¬â?¢ conduction using\na Y-function applied to the saturation domain. The influence of the temperature in this domain is presented for the first time.We\npoint out the limits of the Y-function analysis and show that a new function called Z can be used to extract the series resistance in\nthe saturation regime.
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