­
­
­
­

Inventi Impact: Electronic Components

Articles

  • Inventi:eec/16730/15
    Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
    01-Jan-1970 Research 2015 : July - September
    Ignazio Bertuglia, Giuseppe Consentino, Michele Laudani

    This paper studies the effects of proton irradiations on Super Junction High Voltage power MOSFETs to realize transistors with\nfast diode. Experiments were performed on a sample of 600V power MOSFETs and achieved results were compared to standard\nirradiated devices by electrons.

    How to Cite this Article
    CC Compliant Citation: Ignazio Bertuglia, Giuseppe Consentino, and Michele Laudani, â??Proton Irradiations on SJ HV Power MOSFETs to\nRealize Fast Diode Devices,â? Advances in Electrical Engineering, vol. 2014, Article ID 423803, 5 pages, 2014. doi:10.1155/2014/423803,\nhttp://creativecommons.org/licenses/by/3.0/.
    Download Full Text