We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed\nsemiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V\ncharacteristics, gate capacitance and field-effect mobility (up to ~50 cm2 VâË?â??1 sâË?â??1) of the TFTs were evaluated with\nbetter precision compared with the results obtained from calculated gate capacitance. The C-V characteristics\nmeasured under different frequencies further enabled the extraction and analysis of the interface trap density at\nthe nanotube-dielectric layer interface, which was found to increase significantly as the network density increases.\nThe results presented here indicate that C-V measurement is a powerful tool to assess the electrical performance\nand to investigate the carrier transport mechanism of TFTs based on carbon nanotubes.
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