This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI\nCMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives\nto bulk transistors especially when the transistor�s architecture is going fully\ndepleted and its size is becoming much smaller, 28-nm and above. Reliability\ntests of those alternatives are first discussed. Then, a comparison is made between\nthe two alternative transistors comparing their physical properties, electrical\nproperties, and their preferences in different applications.
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