It is becoming more important for electronic devices to operate stably and reproducibly\nunder harsh environments, such as extremely low and/or high temperatures, for robust and practical\napplications. Here, we report on the effects of atomic-layer-deposited (ALD) aluminum oxide\n(Al2O3) passivation on multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) and their\ntemperature-dependent electrical properties, especially at a high temperature range from 293 K to\n380 K.With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the\nentire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction\nof hysteresis but also enhancement of current in output characteristics. In addition, we investigated\nthe temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility\nbased on the Y-function method.
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