We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model\nsuitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an\nindustry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance\nfor the transistor to be determined as a function of the device geometric structure and design features, material composition\nparameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter\nextraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models.\nThe new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF\nperformance of an experimental C-band microwave power amplifier.
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