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Inventi Impact: Electronic Components

Articles

  • Inventi:eec/33228/20
    Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing
    Research 2021 : January - March
    Zahrah Alqahtani, Nawal Alghamdi, Thomas J Robshaw, Robert Dawson, Mark D Ogden, Alastair Buckely, Martin Grell

    We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes\nfor water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading\nof a commercial macroporous aminophosphonic acid resin, PurometTM MTS9501, and were filled into a\nplasticised poly(vinyl chloride) (PVC) phase transfer membrane................

    How to Cite this Article
    Attribution/ CC Compliant Citation:Alqahtani, Zahrah, et al. \"Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing.\"\nMicromachines 11.10 (2020): 923. https://doi.org/10.3390/mi11100923, http://creativecommons.org/licenses/by/4.0/\nSome formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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