Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing\r\nthe diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the\r\nreliability of power electronic converters. For this reason, a novel diagnostic method based on the approximate entropy (ApEn)\r\ntheory is presented in this paper, which can provide statistical diagnosis and allow the operator to replace defective IGBT modules\r\ntimely. The proposed method is achieved by analyzing the cross ApEn of the gate voltages before and after the occurring of defects.\r\nDue to the local damage caused by aging, the intrinsic parasitic parameters of packaging materials or silicon chips inside the IGBT\r\nmodule such as parasitic inductances and capacitances may change over time, which will make remarkable variation in the gate\r\nvoltage. That is to say the gate voltage is close coupled with the defects. Therefore, the variation is quantified and used as a precursor\r\nparameter to evaluate the health status of the IGBT module. Experimental results validate the correctness of the proposed method.
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