In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and\r\nIII-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics\r\nof inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in\r\nmetal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors\r\n(MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2 gate stack exhibited high performance and reliability characteristics,\r\nincluding a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron\r\nmobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less\r\nstress induced leakage current, and less interface charge.
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