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Inventi Impact: Electronic Components

Articles

  • Inventi:eec/57828/23
    Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier
    01-Jul-2023 Research 2023 : July-September
    Baqer O Al-Nashy, Buraq T Sh Al-Mosawi, Mushtaq Obaid Oleiwi, Amin H Al-Khursan

    This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 nm. Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications.

    How to Cite this Article
    Attribution/ CC Compliant Citation: Al-Nashy, Baqer O., et al. "Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier." Journal of Electrical and Computer Engineering 2023 (2023). https://doi.org/10.1155/2023/1941232 http://creativecommons.org/licenses/by/4.0/ Some formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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