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Inventi Impact: Microwave

Articles

  • Inventi:emw/16/12
    TEMPERATURE DEPENDENCE OF GAN HEMT SMALL SIGNAL PARAMETERS
    31-Dec-2011 Research 2012 : January - March
    Ali M Darwish, Amr A Ibrahim, H Alfred Hung

    This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0ââ?¬â??150?C range. The changes with temperature for transconductance (gm), output impedance (Cds and Rds), feedback capacitance (Cdg), input capacitance (Cgs), and gate resistance (Rg) are measured. The variations with temperature are established for gm, Cds, Rds, Cdg, Cgs, and Rg in the GaN technology. This information is useful for MMIC designs.

    How to Cite this Article
    CC Compliant Citation: Ali M. Darwish, Amr A. Ibrahim, and H. Alfred Hung, â??Temperature Dependence of GaN HEMT Small Signal Parameters,â? International Journal of Microwave Science and Technology, vol. 2011, Article ID 945189, 4 pages, 2011. doi: 10.1155/2011/945189
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