This paper presents the formation of the parasitic components that exist in the RF MOSFET structure during its high-frequency\r\noperation. The parasitic components are extracted from the transistor�s S-parameter measurement, and its geometry dependence\r\nis studied with respect to its layout structure. Physical geometry equations are proposed to represent these parasitic components,\r\nand by implementing them into the RF model, a scalable RFCMOS model, that is, valid up to 49.85 GHz is demonstrated. A new\r\nverification technique is proposed to verify the quality of the developed scalable RFCMOS model. The proposed technique can\r\nshorten the verification time of the scalable RFCMOS model and ensure that the coded scalable model file is error-free and thus\r\nmore reliable to use.
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