Transformer-based shunt single pole, double-throw (SPDT) switches are analyzed, and design equations are provided. A mm-wave\r\ntransformer-based SPDT shunt switch prototype was designed and fabricated in 90nm digital CMOS process. It has a minimum\r\ninsertion loss of 3.4 dB at 50 GHz from the single pole to the ON-thru port and a leakage of 19 dB from the single pole to the\r\nOFF-thru port. The isolation is 13.7 dB between the two thru ports. Large signal measurements verify that the switch is capable\r\nof handling dBm of input power at its 1 dB compression point. The fabricated SPDT switch has a minute active area size of\r\n60 Ã?µmÃ?â?? 60 Ã?µm.
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