Filters based on film bulk acoustic resonators (FBARs) are widely used for mobile phone applications, but they can also address\r\nwideband aerospace requirements. These devices need high electromechanical coupling coefficients to achieve large band pass\r\nfilters.The piezoelectric material LiNbO3 complies with such specifications and is compatible with standard fabrication processes.\r\nIn this work, simple metalââ?¬â?LiNbO3ââ?¬â?metal structures have been developed to fabricate single FBAR elements directly connected\r\nto each other on a single chip. A fabrication process based on LiNbO3/silicon Au-Au bonding and LiNbO3 lapping/polishing\r\nhas been developed and is proposed in this paper. Electrical measurements of these FBAR filters are proposed and commented\r\nexhibiting filters with 8% of fractional bandwidth and 3.3 dB of insertion losses. Electrical measurements show possibilities to\r\nobtain 14% of fractional bandwidth. These devices have been packaged, allowing for power handling, thermal, and ferroelectric\r\ntests, corresponding to spatial conditions.
Loading....