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Inventi Impact: Optical Technologies

Articles

  • Inventi:eot/15073/15
    Emission Spectral Control of a Silicon Light Emitting Diode\nFabricated by Dressed-Photon-Phonon Assisted Annealing Using\na Short Pulse Pair
    01-Jan-1970 Research 2015 : January - March
    Tadashi Kawazoe, Naoki Wada, Motoichi Ohtsu

    We fabricated a high-efficiency infrared light emitting diode (LED) via dressed-photon-phonon (DPP) assisted annealing of a p-n\nhomojunctioned bulk Si crystal.The center wavelength in the electroluminescence (EL) spectrum of this LED was determined by\nthe wavelength of a CW laser used in the DPP-assisted annealing.We have proposed a novel method of controlling the EL spectral\nshape by additionally using a pulsed light source in order to control the number of phonons for the DPP-assisted annealing. In this\nmethod, the Si crystal is irradiated with a pair of pulses having an arrival time difference between them. The number of coherent\nphonons created is increased (reduced) by tuning (detuning) this time difference.ASi-LED was subjected toDPP-assisted annealing\nusing a 1.3 ?m (?v = 0.94 eV) CW laser and a mode-locked pulsed laser with a pulse width of 17 fs.When the number of phonons\nwas increased, the EL emission spectrum broadened toward the high-energy side by 200meV or more. The broadening towards\nthe low-energy side was reduced to 120 meV.

    How to Cite this Article
    CC Compliant Citation: Tadashi Kawazoe, Naoki Wada, and\nMotoichi Ohtsu, â??Emission Spectral Control of a Silicon Light\nEmitting Diode Fabricated by Dressed-Photon-Phonon Assisted\nAnnealing Using a Short Pulse Pair,â? Advances in Optical\nTechnologies, vol. 2014, Article ID 958327, 8 pages, 2014.\ndoi:10.1155/2014/958327, http://creative commons.org/\nlicenses/by/3.0/.
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