Inventi Impact: Optical Technologies

Inventi:eot/15841/15

Performance of All-optical XNOR Gate Based on Two-photon Absorption in Semiconductor Optical\nAmplifiers

All-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is realized by\nusingMach-Zehnder interferometers (MZIs) and exploiting the nonlinear effect of two-photon absorption (TPA) in semiconductor\noptical amplifiers (SOAs).Theemployed model takes into account the impact of amplified spontaneous emission (ASE), input pulse\nenergy, pulsewidth, SOAs carrier lifetime, and linewidth enhancement factor (????-factor) on the gate�s output quality factor (Q-factor).\nThe outcome of this study shows that the all-optical XNOR gate is indeed feasible with the proposed scheme at 250 Gb/s with both\nlogical correctness and acceptable quality