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Inventi Impact: Optical Technologies

Articles

  • Inventi:eot/16784/15
    GaP Homojunction LEDs Fabricated by Dressed-photon-phonon-assisted Annealing
    01-Jan-1970 Research 2015 : July - September
    Jun Hyoung Kim, Tadashi Kawazoe, Motoichi Ohtsu

    By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV).\nThe device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias\ncurrent, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted\nannealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before\nannealing.

    How to Cite this Article
    CC Compliant Citation: Jun Hyoung Kim, Tadashi Kawazoe, and\nMotoichi Ohtsu, â??GaP Homojunction LEDs Fabricated by Dressed-\nPhoton-Phonon-Assisted Annealing,â? Advances in Optical\nTechnologies, vol. 2015, Article ID 236014, 8 pages, 2015.\ndoi:10.1155/2015/236014, https://creativecommons.org/\nlicenses/by/3.0/.
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