The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD\npattern shows that the thin films were highly textured along the c-axis and perpendicular to the surface of the substrate. Raman\nspectra reveal that Bi2O3 segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the\nfilm was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary\nwere interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the\nbreakdown voltage reduced to 5.34V.
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