By analyzing the factors which affect the wall-plug efficiency of semiconductor Laser Diodes (LDs),\na high efficiency 1060 nm LD was designed, including active region, waveguide layers, and cladding\nlayers. The simulation result shows that the component of In in InGaAs in the active region\ncannot be too small, otherwise the thickness of InGaAs active layer will exceed the critical thickness,\nmeanwhile the asymmetric large optical cavity can decrease the cavity loss effectively. The\nepitaxial structure was grown by MOCVD, experimental results of varying cavity length showed\nthat the internal quantum efficiency reached 98.57%, and the cavity loss was only 0.273 cm1. Devices\nwith 4 mm-cavity-length and 100 m-strip-width were fabricated, 47.4% wall-plug efficiency\nwas reached under QCW pulse condition at room temperature, and the peak wavelength was\n1059.4 nm.
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