GaInNAs was proposed and created in 1995. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting\r\nmaterial with a bandgap energy that corresponds to near infrared. By combining GaInNAs with GaAs, an ideal band lineup\r\nfor laser-diode application is achieved. This paper presents the reproducible growth of high-quality GaInNAs by molecular\r\nbeam epitaxy. Examining the effect of nitrogen introduction and its correlation with impurity incorporation, we find that Al\r\nis unintentionally incorporated into the epitaxial layer even though the Al cell shutter is closed, followed by the concomitant\r\nincorporation of O and C. A gas-phase-scattering model can explain this phenomenon, suggesting that a large amount of N2 gas\r\ncauses the scattering of residual Al atoms with occasional collisions resulting in the atoms being directed toward the substrate.\r\nHence, the reduction of the sublimated Al beam during the growth period can suppress the incorporation of unintentional\r\nimpurities, resulting in a highly pure epitaxial layer.
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