Current Issue : January - March Volume : 2019 Issue Number : 1 Articles : 5 Articles
This paper presents the design, fabrication, and electrical characterization of an\nelectrostatically actuated and capacitive sensed...plate resonator structure that exhibits a\npredicted mass sensitivity of.... The resonator is embedded in a fully on-chip\nPierce oscillator scheme, thus obtaining a quasi-digital output sensor with a short-term frequency\nstability of....(...) n air conditions, corresponding to an equivalent mass noise floor as\nlow as.... The monolithic CMOS-MEMS sensor device is fabricated using a commercial..... metal complementary metal-oxide-semiconductor (CMOS) process, thus featuring\nlow cost, batch production, fast turnaround time, and an easy platform for prototyping distributed\nmass sensors with unprecedented mass resolution for this kind of devices....
which\nled to rearrangements of the preferred crystalline orientation and enhancement of grain size when\nthe annealing temperature was further increased. The electrical conductivity of the Mo thin films was\nmajorly affected by the increase of Mo crystallite size as the annealing temperature was increased.\nOverall, the improvement of material sustainability and compatibility in the high temperature\nannealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical\nstructured Si QDs solar cells....
Micro magnetic field (MMF) sensors developed employing complementary metal oxide\nsemiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis\nsensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized\nto detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense\nMF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to\nthe magnetotransistor. The additional collectors enhance bias current and carrier number, so that\nthe sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require\npost-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis\nMF and its sensitivity is 0.55 V/T in the y-axis MF....
This paper investigated the property evolutions of Mo thin films that were subjected to\npost-sputtering heat treatments from... It was found that, after annealing, the use\nof Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on\nfused silica substrates. The recrystallization of the Mo thin film was found to start at...., which\nled to rearrangements of the preferred crystalline orientation and enhancement of grain size when\nthe annealing temperature was further increased. The electrical conductivity of the Mo thin films was\nmajorly affected by the increase of Mo crystallite size as the annealing temperature was increased.\nOverall, the improvement of material sustainability and compatibility in the high temperature\nannealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical\nstructured Si QDs solar cells....
This paper presents a new quenching circuit (QC) and single photon avalanche diode\n(SPAD) implemented in TSMC CMOS 65 nm technology. The QC was optimized for single photon\ntiming resolution (SPTR) with a view to an implementation in a 3D digital SiPM. The presented QC\nhas a timing jitter of 4 ps full width at half maximum (FWHM) and the SPAD and QC has a 7.8 ps\nFWHM SPTR. The QC adjustable threshold allows timing resolution optimization as well as SPAD\nexcess voltage and rise time characterization. The adjustable threshold, hold-off and recharge are\nessential to optimize the performances of each SPAD. This paper also provides a better understanding\nof the different contributions to the SPTR. A study of the contribution of the SPAD excess voltage\nvariation combined to the QC time propagation delay variation is presented. The proposed SPAD\nand QC eliminates the SPAD excess voltage contribution to the SPTR for excess voltage higher than\n1 V due to its fixed time propagation delay....
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