Current Issue : April - June Volume : 2019 Issue Number : 2 Articles : 5 Articles
In the IoT/wearable devices, the antenna is shared with the receiver and transmitter of the\ntransceiver. This requires the control of the switch between the antenna and the control circuitry to\nachieve both low insertion loss and high isolation. This paper presents a low insertion loss and high\nisolation switch based on Single Pole Double Throw (SPDT) switch for 2.4 GHz Bluetooth low power\n(BLE) transceiver. The body-floating technique is used to improve the insertion lossâ??s performance.\nAn ultra-small on-chip matching network with high Q-factor is proposed. The shunt transistors\nare used as active shunt capacitors that create the active matching network to improve isolation\ncharacteristics. The proposed SDPT switch was designed using 55 nm CMOS process with the total....................
Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into the market by major semiconductor foundry companies. On the other hand, a development of the NV memories using other writing schemes are now underway. In this review article, first, the recent advancement of the spintronics device using STT and the NV memories using them are reviewed. Next, spintronics devices using the other two writing schemes (SOT and E-field) are briefly reviewed, including issues to be addressed for the NV memories application....
This article presents all steps between the advanced design and the production\nof CMOS compatible thermoelectric effect infrared sensors dedicated to\nsmart home applications. It will start by making a comparison between thermopile,\nbolometer and pyroelectric technologies. Although sensitivity performances\navailable with bolometers appear to be better at first sight, it is\nfound that thermopiles have non-negligible advantages that make them more\nsuitable for this application field. Then the different steps necessary for the\ndesign will be described, starting from the thermoelectric model of the sensor\n(temperature gradient, electrical sensitivity, etc.) and considering all steps up\nto technological manufacturing in a clean room. The results obtained on the\nstructures produced on a specific computer-controlled measurement bench\n(temperature regulation with an onboard preamplification card) will be presented.\nFinally, the results prove that the square structures have better performances\n(S = 82 V/W and NETD = 208 mK)....
The impact of Ca and Si nano-scale structures on parameters and density of\nstates of single-crystalline CaF2(111) was studied. It was shown that at low\nconcentration of ions of....................
Nitrogen-doped TiO2 nanotube arrays (N-TNAs) were successfully fabricated by a\nsimple thermal annealing process in ambient N2 gas at 450 degree Centigrade for 3 h. TNAs with modified\nmorphologies were prepared by a two-step anodization using an aqueous NH4F/ethylene glycol\nsolution. The N-doping concentration (0-9.47 at %) can be varied by controlling N2 gas flow rates\nbetween 0 and 500 cc/min during the annealing process. Photocatalytic performance of as-prepared\nTNAs and N-TNAs was studied by monitoring the methylene blue degradation under visible light����...
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