Current Issue : July - September Volume : 2019 Issue Number : 3 Articles : 5 Articles
This paper presents a 2.5 Gbps 10-lane low-power low voltage differential signaling (LVDS)\ntransceiver for a high-speed serial interface. In the transmitter, a complementary MOS H-bridge\noutput driver with a common mode feedback (CMFB) circuit was used to achieve a stipulated\ncommon mode voltage over process, voltage and temperature (PVT) variations. The receiver was\ncomposed of a pre-stage common mode voltage shifter and a rail-to-rail comparator. The common\nmode voltage shifter with an error amplifier shifted the common mode voltage of the input\nsignal to the required range, thereby the following rail-to-rail comparator obtained the maximum\ntransconductance to recover the signal. The chip was fabricated using SMIC 28 nm CMOS technology,\nand had an area of 1.46 mm2.The measured results showed that the output swing of the transmitter\nwas around 350 mV, with a root-mean-square (RMS) jitter of 3.65 ps@2.5 Gbps, and the power\nconsumption of each lane was 16.51 mW under a 1.8 V power supply....
Cu-Mn-Dy resistive thin films were prepared on glass and Al2O3 substrates, which was\nachieved by co-sputtering the Cu-Mn alloy and dysprosium targets. The effects of the addition of\ndysprosium on the electrical properties and microstructures of annealed Cu-Mn alloy films were\ninvestigated. The composition, microstructural and phase evolution of Cu-Mn-Dy films were\ncharacterized using field emission scanning electron microscopy, transmission electron\nmicroscopy and X-ray diffraction.All Cu-Mn-Dy films showed an amorphous structure when the\nannealing temperature was set at 300 DegreeC. After the annealing temperature was increased to 350 DegreeC,\nthe MnO and Cu phases had a significant presence in the Cu-Mn films. However, no MnO phases\nwere observed in Cu-Mn-Dy films at 350 DegreeC. Even Cu-Mn-Dy films annealed at 450 DegreeC showed\nno MnO phases. This is because Dy addition can suppress MnO formation. Cu-Mn alloy films\nwith 40% dysprosium addition that were annealed at 300 DegreeC exhibited a higher resistivity of approximately 2100 micro Ohm.cm with a temperature coefficient of resistance of -85 ppm/DegreeC....
In this research work, the threshold voltage and subthreshold swing of cylindrical\nsurrounding double-gate (CSDG) MOSFET have been analyzed. These analyses are based on\nthe analytical solution of 2D Poisson equation using evanescent-mode analysis (EMA). This EMA\nprovides the better approach in solving the 2D Poisson equation by considering the oxide and Silicon\nregions as a two-dimensional problem, to produce physically consistent results with device simulation\nfor better device performance. Unlike other models such as polynomial exponential and parabolic\npotential approximation (PPA) which consider the oxide and silicon as one-dimensional problem.\nUsing the EMA, the 2D Poisson equation is decoupled into 1D Poisson equation which represent\nthe long channel potential and 2D Laplace equation describing the impacts of short channel effects\n(SCEs) in the channel potential. Furthermore, the derived channel potential close-form expression\nis extended to determine the threshold voltage and subthreshold behavior of the proposed CSDG\nMOSFET device. This model has been evaluated with various device parameters such as radii Silicon\nfilm thickness, gate oxide thickness, and the channel length to analyze the behavior of the short\nchannel effects in the proposed CSDG MOSFET. The accuracy of the derived expressions have been\nvalidated with the mathematical and numerical simulation....
In this work, we propose and evaluate a concept for a selective thermal emitter based\non Tamm plasmons suitable for monolithic on-chip integration and fabrication by conventional\ncomplementary metal oxide semiconductor (CMOS)-compatible processes. The original design of\nTamm plasmon structures features a purely one-dimensional array of layers including a Bragg mirror\nand a metal. The resonant field enhancement next to the metal interface corresponding to optical\nTamm states leads to resonant emission at the target wavelength, which depends on the lateral\ndimensions of the bandgap structure. We demonstrate the application of this concept to a silicon\nslab structure instead of deploying extended one dimensional layers thus enabling coupling into\nslab waveguides.Here we focus on the mid-infrared region for absorption sensing applications,\nparticularly on the CO2 absorption line at 4.26 micro m as an example. The proposed genetic-algorithm\noptimization process utilizing the finite-element method and the transfer-matrix method reveals\nresonant absorption in case of incident modes guided by the slab and, by Kirchhoffâ??s law, corresponds\nto emittance up to 90% depending on different choices of the silicon slab height when the structure is\nused as a thermal emitter. Although we focus on the application as an emitter in the present work,\nthe structure can also be operated as an absorber providing adjusted lateral dimensions and/or\nexchanged materials (e.g., a different choice for metal)....
The possibility of controlling the insulator-to-metal transition (IMT) in nano-particle VO2\n(NP-VO2) using the electric field effect in a metal-oxide-VO2 field-effect transistor (MOVFET) at\nroom temperature was investigated for the first time. The IMT induced by current in NP-VO2\nis a function of nano-particle size and was studied first using the conducting atomic force\nmicroscope (cAFM) current-voltage (I-V) measurements. NP-VO2 switching threshold voltage (VT),\nleakage current (Ileakage), and the sub-threshold slope of their conductivity (Sc) were all determined.\nThe cAFM data had a large scatter.However, VT increased as a function of particle height (h)\napproximately as VT(V) = 0.034 h, while I leakage decreased as a function of h approximately as Ileakage\n(A) = 3.4 * 10^-8e^-h/9.1. Thus, an asymptotic leakage current of 34 nA at zero particle size and\na tunneling (carrier) decay constant of.................
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