Current Issue : July - September Volume : 2020 Issue Number : 3 Articles : 5 Articles
It is broadly accepted that the silicon-based CMOS has touched its scaling limits and\nalternative substrate materials are needed for future technology nodes. An Indium-Gallium-Arsenide\n(InGaAs)-based device is well situated for further technology nodes..........................
Through-silicon via (TSV) is an important component for implementing 3-D packages and\n3-D integrated circuits as the TSV technology allows stacked silicon chips to interconnect through\ndirect contact to help facilitate high-speed signal processing. By facilitating the stacking of silicon\nchips, the TSV technology also helps to meet the increasing demand for high density and high\nperformance miniaturized electronic products...............................
Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event\nTransient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event\nUpset (SEU) effects. However, the importance of considering SET in Very-Large-System-Integration\n(VLSI) circuits increases given the reduction of the transistor dimensions and the logic data path\ndepth in advanced technology nodes............................
Epitaxial in situ doped Si0.73Ge0.27 alloys were grown selectively on patterned bulk Ge and\nbulk Si wafers................................
A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD)\nwith multiple charge transfers and sampling is described. In the proposed pixel architecture, the\nphotogenerated signal is sampled non-destructively multiple times and the results are averaged.\nEach signal measurement is statistically independent and by averaging, the electronic readout noise\nis reduced to a level where single photons can be distinguished reliably...............................
Loading....