Current Issue : July-September Volume : 2023 Issue Number : 3 Articles : 5 Articles
This work presents a two-stage operational transconductance amplifier suitable for sub- 1 V operation. This characteristic is achieved thanks to the adoption of a bulk-driven non-tailed differential pair. Local positive feedback is exploited to boost the equivalent transconductance of the first stage and the quasi-floating gate approach enables the class AB operation of the second stage. Implemented in a standard 180 nm CMOS technology and supplied at 0.6 V, the amplifier exhibits a 350 kHz gain bandwidth product and a phase margin of 69◦ while driving a 150 pF load. Compared to other solutions in the literature, the proposed one exhibits a considerable performance improvement, especially for large signal operation....
A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large conductivity due to an overabundance of carriers for reverse conduction. By preventing electrons from leaking across the N+ region at the collector side, the extra electron-blocking (EB) layer introduced in the SJ-RC-IGBT can dramatically enhance electron–hole pairs in the N/P-pillars. Hence, the SJ-RC-IGBT demonstrates a low on-state voltage (Von). In addition, snapback-free characteristics and a large safe operating area (SOA) are also achieved in the SJ-RC-IGBT. During the turn-off process, a significant amount of electrons are extracted by parasitic MOS across the EB layer at the collector side to decrease the turn-off loss (Eoff). According to the optimized results, the SJ-RC-IGBT with EB layer obtains an ultralow Eoff of 3.9 mJ/cm2 at Von = 1.38 V with 88% and 81% decreases, respectively, compared with the conventional reverse-conducting IGBT (CRC-IGBT) and superjunction IGBT (SJ-IGBT)....
This article presents a wideband bias circuit with low parasitic inductance for high-power pulsed amplifiers. The proposed bias circuit works similarly to the traditional bias circuit in that it can ensure the transmission of microwaves from the power amplifier to the load while preventing the transmission of microwaves from the power amplifier to the power supply. By making the bias line shorter and the transmission line wider than the traditional bias circuit, the proposed bias circuit reduces its parasitic inductance. The reduction of parasitic parameters is critical for reducing the drain voltage overshoot of the high-power pulse power amplifier and ensuring its safety. The simulation results demonstrate that the proposed bias circuit has a lower parasitic inductance and a wider bandwidth. To validate the theory and simulation results, the traditional and the proposed bias circuits are fabricated using microstrip circuits. Both the simulation and experimental results indicate that the proposed bias circuit has a one-third lower parasitic inductance than the traditional bias circuit. Furthermore, the proposed bias circuit has a wider bandwidth....
This is the first review of conductive electrets (unpoled carbons and metals), which provide a new avenue for low-power electronics. The electret provides low DC voltage (μV) while allowing low DC current (μA) to pass through. Ohm’s Law is obeyed. The voltage scales with the interelectrode distance. Series connection of multiple electret components provides a series voltage that equals the sum of the voltages of the components if there is no bending at the connection between the components. Otherwise, the series voltage is below the sum. Bending within the component also diminishes the voltage because of the polarization continuity decrease. The electret originates from the interaction of a tiny fraction of the carriers with the atoms. This interaction results in the charge in the electret. Dividing the electret charge by the electret voltage V’ provides the electret-based capacitance C’, which is higher than the permittivity-based capacitance (conventional) by a large number of orders of magnitude. The C’ governs the electret energy (1/2 C’V’2) and electret discharge time constant (RC’, where R = resistance), as shown for metals. The discharge time is promoted by a larger inter-electrode distance. The electret discharges occur upon short-circuiting and charge back upon subsequent opencircuiting. The discharge or charge of the electret amounts to the discharge or charge of C’....
SiC detectors based on a Schottky junction represent useful devices to characterize fast lasergenerated plasmas. High-intensity fs lasers have been used to irradiate thin foils and to characterize the produced accelerated electrons and ions in the target normal sheath acceleration (TNSA) regime, detecting their emission in the forward direction and at different angles with respect to the normal to the target surface. The electrons’ energies have been measured using relativistic relationships applied to their velocity measured by SiC detectors in the time-of-flight (TOF) approach. In view of their high energy resolution, high energy gap, low leakage current, and high response velocity, SiC detectors reveal UV and X-rays, electrons, and ions emitted from the generated laser plasma. The electron and ion emissions can be characterized by energy through the measure of the particle velocities with a limitation at electron relativistic energies since they proceed at a velocity near that of the speed of light and overlap the plasma photon detection. The crucial discrimination between electrons and protons, which are the fastest ions emitted from the plasma, can be well resolved using SiC diodes. Such detectors enable the monitoring of the high ion acceleration obtained using high laser contrast and the absence of ion acceleration using low laser contrast, as presented and discussed....
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