Current Issue : July-September Volume : 2024 Issue Number : 3 Articles : 5 Articles
This work presents a novel trusted LC voltage-controlled oscillator (VCO) with an embedded compact analog Physically Unclonable Function (PUF) used for authentication. The trusted VCO is implemented in a 1P9M 65 nm standard CMOS process and consumes 1.75 mW. It exhibits a measured phase noise (PN) of −104.8 dBc/Hz @ 1 MHz and −132.2 dBc/Hz @ 10 MHz offset, resulting in Figures of Merit (FoMs) of 191.7 dBc/Hz and 199.1 dBc/Hz, respectively. With the measured frequency tuning range (TR) of ~5.5 GHz, the FoM with tuning (FoMT) reaches 197.6 dBc/Hz and 205.0 dBc/Hz at 1 MHz and 10 MHz offset, respectively. The analog PUF consists of CMOS cross-coupled pairs in the main VCO to change analog characteristics. Benefiting from the impedance change and parasitic capacitance of the cross-coupled pairs, the AC and DC responses of the VCO are utilized for multiple responses for each input. The PUF consumes 0.83 pJ/bit when operating at 1.5 Gbps. The proposed PUF exhibits a measured Inter-Hamming Distance (HD) of 0.5058b and 0.4978b, with Intra-HD reaching 0.0055b and 0.0053b for the current consumption and fosc, respectively. The autocorrelation function (ACF) of 0.0111 and 0.0110 is obtained for the current consumption and fosc, respectively, at a 95% confidence level....
A novel low-power MOS-only voltage reference is presented. The Enz–Krummenacher– Vittoz (EKV) model is adopted to provide a new perspective on the operating principle. The normalized charge density, introduced as a new variable, serves as an indicator when trimming the output temperature coefficient. The proposed voltage reference consists of a specific current generator and a 5-bit trimmable load. Thanks to the good match between the current source stage and the output stage, the nonlinear temperature dependence of carrier mobility is automatically canceled out. The circuit is designed using 55 nm COMS technology. The operating temperature ranges from −40 ◦C to 120 ◦C. The average temperature coefficient of the output voltage can be reduced to 21.7 ppm/◦C by trimming. The power consumption is only 23.2 nW with a supply voltage of 0.8 V. The line sensitivity and the power supply rejection ratio at 100 Hz are 0.011 %/V and −89 dB, respectively....
Floating-gate transistor lies at the heart of many aspects of semiconductor applications such as neural networks, analog mixedsignal, neuromorphic computing, and especially in nonvolatile memories. The purpose of this paper was to design a highperformance nanocrystal floating-gate transistor in terms of a large memory window, low power, and extraordinary erasing speeds. Besides, the transistor achieves a thin thickness of the tunnel gate oxide layer. In order to obtain the high-performance design, this work proposed a set of structure parameters for the device such as the tunnel oxide layer thickness, Interpoly Dielectric (IPD), dot dimension, and dot spacing. Besides, this work was successful in the virtual fabrication process and methodology to fabricate and characterize the 65nm nanocrystal floating-gate transistor. Regarding the results, while the fabrication process solves the limitation of the tunnel oxide layer thickness with the small value of 6 nm, the performance of the transistor has been significantly improved, such as 2.8V of the memory window with the supply voltage of ±6V at the control gate. In addition, the operation speeds are compatible, especially the rapid erasing speeds of 2.03 μs, 28.6 ns, and 1.6 ns when the low control gate voltages are ±9V, ±12 V, and ±15 V, respectively....
As production technology advances, integrated circuits are increasing in size, leading to a corresponding rise in power consumption if not properly optimized. Consequently, the optimization of integrated circuit power consumption has gained paramount significance. This paper provides an overview of the theoretical and research developments in Very Large Scale Integration (VLSI) low-power design. Initially, the paper delves into the components of VLSI power consumption, elucidating the origins of various power consumption types and the factors influencing their magnitude. Subsequently, existing power reduction technologies are examined, including transistor-level optimization, gate-level optimization, and system-level power optimization. The principles, applicable power consumption types, as well as their respective advantages and drawbacks are analysed. The paper also introduces methods for evaluating VLSI power consumption and summarizes the characteristics, advantages, and disadvantages of highlevel power estimation and low-level power estimation. Ultimately, it underscores the importance of considering multiple power optimization strategies during VLSI design and discusses research approaches for achieving low power consumption. This comprehensive exploration contributes to the enhancement and optimization of VLSI design efforts....
The need for low-power low-voltage circuit so lutions increases significantly with the rapid spread of wireless sensor network (WSN) and energy harvesting applications. The design of Complementary Metal-Oxide Semiconductor (CMOS) oscillators in sub-threshold region is challenged by the limits of the minimum start-up sup ply voltage, the power available from the harvester, die area, the demand of fully integrated CMOS circuits, and the additional auxiliary circuits that are needed to stabilize the frequency vs a supply voltage VDD. In this work, low-power CMOS oscillator with a simplified design is proposed in order to overcome the aforementioned obstacles. The circuit is designed using 2.5μm 2-polySi 2-metal CMOS technology from IMB–CNM (CSIC) [1] with a threshold voltage of n-channel metal oxide semiconductor NMOS and p-channel metal oxide semiconductor PMOS transistors of 0.86 and −1.52 V, respectively. The suggested oscillator is capable to start up even in the deep sub-threshold region at VDD of 0.25 V. Accordingly, the minimum power consumption is 2.9 pW with an oscillation frequency of 2 Hz. The circuit can produce a P–P voltage of the oscillation signal equal to the supply voltage within a power supply range of 0.25–1.25 V....
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